[F-5-1] Improvement of current collapse by surface treatment and passivation layer in p-GaN gate GaN HEMT

T. Katsuno¹、M. Kanechika¹、K. Itoh¹、K. Nishikawa¹、T. Uesugi¹、T. Kachi¹ (1.Toyota Central R&D Labs. Inc. , Japan)

https://doi.org/10.7567/SSDM.2012.F-5-1