[F-5-2] Improved Electrical Characteristics of AlGaN/GaN HEMT with In-situ Deposited Silicon Carbon Nitride Cap Layer

N. Jeon¹、W. Choi¹、J. H. Lee²、K. S. Kim²、H. Y. Cha³、K. S. Seo¹ (1.Seoul National Univ.、2.Samsung Electronics Company Ltd.、3.Hongik Univ. , Korea)

https://doi.org/10.7567/SSDM.2012.F-5-2