Improved Electrical Characteristics of AlGaN/GaN HEMT with In-situ Deposited Silicon Carbon Nitride Cap Layer

N. Jeon; W. Choi; J. H. Lee; K. S. Kim; H. Y. Cha; K. S. Seo

doi:https://doi.org/10.7567/SSDM.2012.F-5-2

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[F-5-2] Improved Electrical Characteristics of AlGaN/GaN HEMT with In-situ Deposited Silicon Carbon Nitride Cap Layer

N. Jeon¹, W. Choi¹, J. H. Lee², K. S. Kim², H. Y. Cha³, K. S. Seo¹ (1.Seoul National Univ., 2.Samsung Electronics Company Ltd., 3.Hongik Univ. , Korea)

https://doi.org/10.7567/SSDM.2012.F-5-2

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