[F-5-3] Enhancement mode AlGaN/GaN MIS-HEMTs using optimized Si3N4 gate insulator

W. Choi¹、H. Ahn¹、N. Jeon¹、I. Min¹、H. Cha²、K. Seo¹ (1.Seoul National Univ.、2.Hongik Univ. , Republic of Korea)

https://doi.org/10.7567/SSDM.2012.F-5-3