[F-5-3] Enhancement mode AlGaN/GaN MIS-HEMTs using optimized Si3N4 gate insulator

W. Choi¹, H. Ahn¹, N. Jeon¹, I. Min¹, H. Cha², K. Seo¹ (1.Seoul National Univ., 2.Hongik Univ. , Republic of Korea)

https://doi.org/10.7567/SSDM.2012.F-5-3