The Japan Society of Applied Physics

[F-6-3] Lateral High-Voltage 4H-SiC IGBTs

W. S. Lee1, C. Y. Cheng1, K. W. Chu1, C. F. Huang1, F. Zhao2, L. S. Lee3, Y. S. Chen3, C. Y. Lee3, M. J. Tsai3 (1.National Tsing Hua Univ. , Taiwan, 2.Washington State Univ. , USA, 3.Indus. Tech. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.F-6-3