Lateral High-Voltage 4H-SiC IGBTs

W. S. Lee; C. Y. Cheng; K. W. Chu; C. F. Huang; F. Zhao; L. S. Lee; Y. S. Chen; C. Y. Lee; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2012.F-6-3

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[F-6-3] Lateral High-Voltage 4H-SiC IGBTs

W. S. Lee¹, C. Y. Cheng¹, K. W. Chu¹, C. F. Huang¹, F. Zhao², L. S. Lee³, Y. S. Chen³, C. Y. Lee³, M. J. Tsai³ (1.National Tsing Hua Univ. , Taiwan, 2.Washington State Univ. , USA, 3.Indus. Tech. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.F-6-3

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