Significant Effect of JFET Doping on Low On-resistance 4H-SiC DMOSFETs of 3300 V Rating

K. Hamada; N. Miura; S. Hino; T. Kawakami; M. Imaizumi; H. Sumitani; T. Oomori

doi:https://doi.org/10.7567/SSDM.2012.F-6-4

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[F-6-4] Significant Effect of JFET Doping on Low On-resistance 4H-SiC DMOSFETs of 3300 V Rating

K. Hamada¹、N. Miura^1,2、S. Hino^1,2、T. Kawakami¹、M. Imaizumi¹、H. Sumitani¹、T. Oomori^1,2 (1.Mitsubishi Electric Corp.、2.R&D Partnership for Future Power Electronics Tech. (FUPET) , Japan)

https://doi.org/10.7567/SSDM.2012.F-6-4

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