[F-7-3] Characterization of gate-control efficiency in AlN/AlGaN/GaN metal-insulator-semiconductor structure by capacitance-frequency-temperature mapping

H. A. Shih¹、T. Q. Nguyen¹、M. Kudo¹、T. Suzuki¹ (1.JAIST , JAPAN)

https://doi.org/10.7567/SSDM.2012.F-7-3