[F-9-1] Reverse Gate Bias Stress on high-voltage AlGaN/GaN-on-Si Heterostructure FETs

S. Choi¹、J. Lee¹、H. Yoon¹、H. Cha¹、H. Kim¹ (1.Hongik Univ. , KOREA)

https://doi.org/10.7567/SSDM.2012.F-9-1