[F-9-3] The investigation of p-GaN gate HFET on 6-inch silicon using AlN interlayer

Y. S. Eum¹、W. S. Kim¹、J. Park¹、K. C. Kim¹、E. J. Hwang¹、T. Jang¹ (1.LG Electronics , Korea)

https://doi.org/10.7567/SSDM.2012.F-9-3