[F-9-3] The investigation of p-GaN gate HFET on 6-inch silicon using AlN interlayer

Y. S. Eum¹, W. S. Kim¹, J. Park¹, K. C. Kim¹, E. J. Hwang¹, T. Jang¹ (1.LG Electronics , Korea)

https://doi.org/10.7567/SSDM.2012.F-9-3