[G-3-2] Enhanced memory performance using forming free IrOx/GdOx/W crossbar resistive switches

D. Jana¹、S. Maikap¹、A. Prakash¹、H. Y. Lee²、W. S. Chen²、F. T. Chen²、M. J. Tsai² (1.Chang Gung Univ.、2.Indus. Tech. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.G-3-2