[G-3-2] Enhanced memory performance using forming free IrOx/GdOx/W crossbar resistive switches

D. Jana¹, S. Maikap¹, A. Prakash¹, H. Y. Lee², W. S. Chen², F. T. Chen², M. J. Tsai² (1.Chang Gung Univ., 2.Indus. Tech. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.G-3-2