[G-4-4] Fabrication and Characterization of p-Channel Si Double-Quantum-Dot Structures

K. Yamada¹、T. Kodera^1,2,3、T. Kambara¹、Y. Kawano¹、S. Oda¹ (1.Quantum Nanoelectronics Research Center, Tokyo Tech.、2.Inst. for Nano Quantum Information Electronics, The Univ. of Tokyo、3.PRESTO, Japan Science and Tech. Agency (JST) , Japan)

https://doi.org/10.7567/SSDM.2012.G-4-4