The Japan Society of Applied Physics

[I-4-2] Selective Growth of Gallium Arsenide on Germanium Fins with Different Orientations formed on 10 degrees Offcut Germanium-on-Insulator Substrate

K. H. Goh1,2, Y. Cheng2, K. L. Low1, E. Y. J. Kong1, C. K. Chia2, E. H. Toh3, Y. C. Yeo1 (1.National Univ. of Singapore, 2.Inst. of Material Research and Engineering (IMRE) ->Inst, 3.GLOBALFOUNDRIES , Singapore)

https://doi.org/10.7567/SSDM.2012.I-4-2