[I-4-2] Selective Growth of Gallium Arsenide on Germanium Fins with Different Orientations formed on 10 degrees Offcut Germanium-on-Insulator Substrate

K. H. Goh^1,2, Y. Cheng², K. L. Low¹, E. Y. J. Kong¹, C. K. Chia², E. H. Toh³, Y. C. Yeo¹ (1.National Univ. of Singapore, 2.Inst. of Material Research and Engineering (IMRE) ->Inst, 3.GLOBALFOUNDRIES , Singapore)

https://doi.org/10.7567/SSDM.2012.I-4-2