[J-4-3] Ferroelectric synapse device with brain-like learning function: Analog conductance control in a ferroelectric-gate field-effect transistor based on the timing difference between two pulses

Y. Nishitani¹、Y. Kaneko¹、M. Ueda¹、E. Fujii¹、A. Tsujimura¹ (1.Panasonic Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.J-4-3