[K-9-1] Room-Temperature Detection of Spin-Accumulation Signals in a Silicon-Based MOSFET Structure with a Schottky-Tunnel Contact

K. Hamaya¹、K. Masaki¹、Y. Fujita¹、S. Yamada¹、K. Sawano²、M. Miyao¹ (1.Department of Electronics, Kyushu Univ.、2.Res. Center for Silicon Nano-Sci., Tokyo City Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.K-9-1