Room-Temperature Detection of Spin-Accumulation Signals in a Silicon-Based MOSFET Structure with a Schottky-Tunnel Contact

K. Hamaya; K. Masaki; Y. Fujita; S. Yamada; K. Sawano; M. Miyao

doi:https://doi.org/10.7567/SSDM.2012.K-9-1

[K-9-1] Room-Temperature Detection of Spin-Accumulation Signals in a Silicon-Based MOSFET Structure with a Schottky-Tunnel Contact

K. Hamaya¹, K. Masaki¹, Y. Fujita¹, S. Yamada¹, K. Sawano², M. Miyao¹ (1.Department of Electronics, Kyushu Univ., 2.Res. Center for Silicon Nano-Sci., Tokyo City Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.K-9-1

2012 International Conference on Solid State Devices and Materials

[K-9-1] Room-Temperature Detection of Spin-Accumulation Signals in a Silicon-Based MOSFET Structure with a Schottky-Tunnel Contact