[K-9-7] Effects of interface resistance asymmetry on magnetoresistance of spin transistor structures

T. Tanamoto¹, H. Sugiyama¹, T. Inokuchi¹, M. Ishikawa¹, Y. Saito¹ (1.Toshiba Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.K-9-7