[K-9-7] Effects of interface resistance asymmetry on magnetoresistance of spin transistor structures

T. Tanamoto¹、H. Sugiyama¹、T. Inokuchi¹、M. Ishikawa¹、Y. Saito¹ (1.Toshiba Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.K-9-7