[L-1-5] Compact Modeling of Floating-Base Effect in IGBT Based on Potential Modification by Accumulated Charge

T. Yamamoto¹、M. Miyake²、M. Miura Mattaush² (1.DENSO Corp.、2.Hiroshima Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.L-1-5