Suppression of Al Memory Effect on Growing 4H-SiC Epilayers by Hot-wall Chemical Vapor Deposition

S.Y. Ji; K. Kojima; Y. Ishida; S. Yoshida; H. Tsuchida; H. Okumura

doi:https://doi.org/10.7567/SSDM.2012.L-2-4

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[L-2-4] Suppression of Al Memory Effect on Growing 4H-SiC Epilayers by Hot-wall Chemical Vapor Deposition

S.Y. Ji¹、K. Kojima¹、Y. Ishida¹、S. Yoshida¹、H. Tsuchida²、H. Okumura¹ (1.National Inst. of Adv. Ind. Sci. and Tech.、2.Central Res. Inst. of Electric Power Indust. , Japan)

https://doi.org/10.7567/SSDM.2012.L-2-4

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