Suppression of Al Memory Effect on Growing 4H-SiC Epilayers by Hot-wall Chemical Vapor Deposition

S.Y. Ji; K. Kojima; Y. Ishida; S. Yoshida; H. Tsuchida; H. Okumura

doi:https://doi.org/10.7567/SSDM.2012.L-2-4

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[L-2-4] Suppression of Al Memory Effect on Growing 4H-SiC Epilayers by Hot-wall Chemical Vapor Deposition

S.Y. Ji¹, K. Kojima¹, Y. Ishida¹, S. Yoshida¹, H. Tsuchida², H. Okumura¹ (1.National Inst. of Adv. Ind. Sci. and Tech., 2.Central Res. Inst. of Electric Power Indust. , Japan)

https://doi.org/10.7567/SSDM.2012.L-2-4

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