[L-2-7] Transistor Characteristics of Lateral MOSFETs with a Thin 3C-SiC Layer on an Insulator

H. Uchida¹、A. Minami¹、T. Sakata¹、H. Nagasawa¹、M. Kobayashi¹ (1.HOYA Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.L-2-7