[L-2-7] Transistor Characteristics of Lateral MOSFETs with a Thin 3C-SiC Layer on an Insulator

H. Uchida¹, A. Minami¹, T. Sakata¹, H. Nagasawa¹, M. Kobayashi¹ (1.HOYA Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.L-2-7