Dependence of chemical structures of transition layer at SiO2/Si(100) interface on oxidation temperature, annealing in forming gas, and oxidizing species

[PS-1-11] Dependence of chemical structures of transition layer at SiO2/Si(100) interface on oxidation temperature, annealing in forming gas, and oxidizing species

T. Suwa¹、A. Teramoto¹、T. Muro²、Y. Kinoshita²、S. Sugawa¹、T. Hattori¹、T. Ohmi¹ (1.Tohoku Univ.、2.Japan Synchrotron Radiation Res. Inst. , Japan)