Dependence of chemical structures of transition layer at SiO2/Si(100) interface on oxidation temperature, annealing in forming gas, and oxidizing species

[PS-1-11] Dependence of chemical structures of transition layer at SiO2/Si(100) interface on oxidation temperature, annealing in forming gas, and oxidizing species

T. Suwa¹, A. Teramoto¹, T. Muro², Y. Kinoshita², S. Sugawa¹, T. Hattori¹, T. Ohmi¹ (1.Tohoku Univ., 2.Japan Synchrotron Radiation Res. Inst. , Japan)