[PS-1-3] Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers

S. Kojima¹、K. Sakamoto¹、Y. Iwamura¹、K. Hirayama¹、K. Yamamoto¹、D. Wang¹、H. Nakashima¹ (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-1-3