[PS-1-9] Interface Reaction Control of La2O3-gated InGaAs MOS Capacitors by Gate Metal Selection

D. H. Zadeh¹、Y. Suzuki¹、H. Omine¹、K. Kakushima¹、P. Ahmet¹、Y. Kataoka¹、A. Nishiyama¹、N. Sugii¹、K. Tsutsui¹、K. Natori¹、T. Hattori¹、H. Iwai¹ (1.Tokyo Tech. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-1-9