Interface Reaction Control of La2O3-gated InGaAs MOS Capacitors by Gate Metal Selection

D. H. Zadeh; Y. Suzuki; H. Omine; K. Kakushima; P. Ahmet; Y. Kataoka; A. Nishiyama; N. Sugii; K. Tsutsui; K. Natori; T. Hattori; H. Iwai

doi:https://doi.org/10.7567/SSDM.2012.PS-1-9

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[PS-1-9] Interface Reaction Control of La2O3-gated InGaAs MOS Capacitors by Gate Metal Selection

D. H. Zadeh¹, Y. Suzuki¹, H. Omine¹, K. Kakushima¹, P. Ahmet¹, Y. Kataoka¹, A. Nishiyama¹, N. Sugii¹, K. Tsutsui¹, K. Natori¹, T. Hattori¹, H. Iwai¹ (1.Tokyo Tech. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-1-9

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