3kV-class DIMOSFET on 4H-SiC (000-1)

H. Kono; M. Furukawa; K. Ariyoshi; T. Suzuki; Y. Tanaka; T. Shinohe

doi:https://doi.org/10.7567/SSDM.2012.PS-14-10

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[PS-14-10] 3kV-class DIMOSFET on 4H-SiC (000-1)

H. Kono^1,2、M. Furukawa^1,2、K. Ariyoshi^1,2、T. Suzuki^1,2、Y. Tanaka^1,3、T. Shinohe^1,2 (1.R&D Partnership for Future Power Electronics Tech.、2.Corporate R&D Center, Toshiba Corp、3.National Inst. of Advanced Industrial Science and Tech. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-14-10

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