3kV-class DIMOSFET on 4H-SiC (000-1)

H. Kono; M. Furukawa; K. Ariyoshi; T. Suzuki; Y. Tanaka; T. Shinohe

doi:https://doi.org/10.7567/SSDM.2012.PS-14-10

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[PS-14-10] 3kV-class DIMOSFET on 4H-SiC (000-1)

H. Kono^1,2, M. Furukawa^1,2, K. Ariyoshi^1,2, T. Suzuki^1,2, Y. Tanaka^1,3, T. Shinohe^1,2 (1.R&D Partnership for Future Power Electronics Tech., 2.Corporate R&D Center, Toshiba Corp, 3.National Inst. of Advanced Industrial Science and Tech. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-14-10

▲