[PS-14-13] Modeling of the Impurity-Gradient Effect in High-Voltage Laterally-Diffused MOSFETs

T. Iizuka¹、K. Fukushima¹、A. Tanaka¹、T. Sakuda¹、H. Kikuchihara¹、M. Miyake¹、H. J. Mattausch¹、M. Miura Mattausch¹ (1.Hiroshima Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-14-13