Modeling of the Impurity-Gradient Effect in High-Voltage Laterally-Diffused MOSFETs

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

T. Iizuka¹, K. Fukushima¹, A. Tanaka¹, T. Sakuda¹, H. Kikuchihara¹, M. Miyake¹, H. J. Mattausch¹, M. Miura Mattausch¹ (1.Hiroshima Univ. , Japan)