Investigation of Electrical Performances for n-MOSFET Devices Integrating with Bonding and Thinning Technologies in 3D Integration

C. A. Cheng; C. H. Lu; C. H. Ho; K. N. Chen

doi:https://doi.org/10.7567/SSDM.2012.PS-2-1

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[PS-2-1] Investigation of Electrical Performances for n-MOSFET Devices Integrating with Bonding and Thinning Technologies in 3D Integration

C. A. Cheng¹、C. H. Lu²、C. H. Ho³、K. N. Chen⁴ (1.National Chiao Tung Univ.、2.National Chiao Tung Univ.、3.National Nano Device Lab.、4.National Chiao Tung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-2-1

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