[PS-2-12] Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back-Gate MOSFET

K. Asakawa¹、K. Yamamoto¹、D. Wang¹、H. Nakashima¹ (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-2-12