[PS-2-5] The Influence of Cu Diffusion from Cu Through-Silicon Via(TSV) on Device Reliability in the 3-D LSI by Using C-V and C-t Measurements

J. C. Bea¹、K. W. Lee¹、T. Fukushima¹、T. Tanaka²、M. Koyanagi¹ (1.New Industry Creation Hatchery Center (NICHe), Tohoku Univ.、2.Dept. of Biomedical Engineering, Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-2-5