The Japan Society of Applied Physics

[PS-2-5] The Influence of Cu Diffusion from Cu Through-Silicon Via(TSV) on Device Reliability in the 3-D LSI by Using C-V and C-t Measurements

J. C. Bea1, K. W. Lee1, T. Fukushima1, T. Tanaka2, M. Koyanagi1 (1.New Industry Creation Hatchery Center (NICHe), Tohoku Univ., 2.Dept. of Biomedical Engineering, Tohoku Univ. , Japan)