[PS-2-7] The results of self annealing process for a copper interconnection on the 4xnm DRAM Products

H. J. Park¹, I. C. Ryu², S. H. Son², J. S. Im³, J. H. Kwon³, Y. P. Song¹, K. S. Jang¹, C. R. Lee¹, J. O. Nam¹, K. I. Yoon¹, K. S. Yoon¹ (1.DRAM Development Division, 2.Research Divisoin, 3.Manufacturing Division , Korea)

https://doi.org/10.7567/SSDM.2012.PS-2-7