[PS-2-7] The results of self annealing process for a copper interconnection on the 4xnm DRAM Products

H. J. Park¹、I. C. Ryu²、S. H. Son²、J. S. Im³、J. H. Kwon³、Y. P. Song¹、K. S. Jang¹、C. R. Lee¹、J. O. Nam¹、K. I. Yoon¹、K. S. Yoon¹ (1.DRAM Development Division、2.Research Divisoin、3.Manufacturing Division , Korea)

https://doi.org/10.7567/SSDM.2012.PS-2-7