[PS-3-15] Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion Implantation Induced Relaxation Technique

T. Mizuno¹、J. Takehi¹、Y. Abe¹、H. Akamatsu¹ (1.Kanagawa Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-3-15