[PS-3-16] An Improved Compact Model for Doped Double-Gate MOSFETs Using a Rigorous Perturbation Method and Higher-Order Correction

X. Feng¹, W. Kang², Q. Cheng³, Y. Chen⁴ (1.Shenzhen Graduate School, Peking Univ., 2.Shenzhen Graduate School, Peking Univ., 3.Shenzhen Graduate School, Peking Univ., 4.Shenzhen Graduate School, Peking Univ. , China)

https://doi.org/10.7567/SSDM.2012.PS-3-16