An Improved Compact Model for Doped Double-Gate MOSFETs Using a Rigorous Perturbation Method and Higher-Order Correction

X. Feng; W. Kang; Q. Cheng; Y. Chen

doi:https://doi.org/10.7567/SSDM.2012.PS-3-16

[PS-3-16] An Improved Compact Model for Doped Double-Gate MOSFETs Using a Rigorous Perturbation Method and Higher-Order Correction

X. Feng¹、W. Kang²、Q. Cheng³、Y. Chen⁴ (1.Shenzhen Graduate School, Peking Univ.、2.Shenzhen Graduate School, Peking Univ.、3.Shenzhen Graduate School, Peking Univ.、4.Shenzhen Graduate School, Peking Univ. , China)

https://doi.org/10.7567/SSDM.2012.PS-3-16

2012 International Conference on Solid State Devices and Materials

[PS-3-16] An Improved Compact Model for Doped Double-Gate MOSFETs Using a Rigorous Perturbation Method and Higher-Order Correction