[PS-3-18] Impact of Backgate Bias on the Sensitivity of Threshold Voltage to Process and Temperature Variations for Ultra-Thin-Body GeOI and InGaAs-OI MOSFETs Considering Quantum Confinement

C. H. Yu¹、P. Su¹ (1.National Chiao Tung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-18