Analysis and Modeling of Geometry Dependent Thermal Resistances in MOSFETs

X. Zhou; T. Inoue; M. Kitamura; K. Matsuura; M. Miyake; T. Iizuka; H. Kikuchihara; M. Naito; H. J. Mattausch; J. He; M. MiuraMattausch

doi:https://doi.org/10.7567/SSDM.2012.PS-3-20

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[PS-3-20] Analysis and Modeling of Geometry Dependent Thermal Resistances in MOSFETs

X. Zhou^1,2, T. Inoue¹, M. Kitamura¹, K. Matsuura¹, M. Miyake¹, T. Iizuka¹, H. Kikuchihara¹, M. Naito¹, H. J. Mattausch¹, J. He², M. MiuraMattausch¹ (1.Hirshima Univ. , Japan, 2.Peking Univ. , China)

https://doi.org/10.7567/SSDM.2012.PS-3-20

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