[PS-3-21] The investigation on Dislocation Edge Stress Effects for Si N-MOSFETs

M. H. Liao¹, C. H. Chen¹, L. C. Chang¹, C. Yang¹, S. C. Kao¹, C. F. Hsieh² (1.National Taiwan Univ., 2.Industrial Tech. Research Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-21