[PS-3-21] The investigation on Dislocation Edge Stress Effects for Si N-MOSFETs

M. H. Liao¹、C. H. Chen¹、L. C. Chang¹、C. Yang¹、S. C. Kao¹、C. F. Hsieh² (1.National Taiwan Univ.、2.Industrial Tech. Research Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-21