Superior Recovery Characteristics of SiGe pMOSFETs under NBTI Stress

D. Y. Choi; C. W. Sohn; H. C. Sagong; E .Y. Jeong; J. W. Jang; C. K. Baek; C. Y. Kang; J. S. Lee; Y. H. Jeong

doi:https://doi.org/10.7567/SSDM.2012.PS-3-23

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[PS-3-23] Superior Recovery Characteristics of SiGe pMOSFETs under NBTI Stress

D. Y. Choi¹、C. W. Sohn¹、H. C. Sagong¹、E .Y. Jeong¹、J. W. Jang¹、C. K. Baek¹、C. Y. Kang²、J. S. Lee¹、Y. H. Jeong¹ (1.Pohang Univ. of Sci. and Tech. (POSTECH) , Republic of Korea、2.SEMATECH , USA)

https://doi.org/10.7567/SSDM.2012.PS-3-23

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