Superior Recovery Characteristics of SiGe pMOSFETs under NBTI Stress

D. Y. Choi; C. W. Sohn; H. C. Sagong; E .Y. Jeong; J. W. Jang; C. K. Baek; C. Y. Kang; J. S. Lee; Y. H. Jeong

doi:https://doi.org/10.7567/SSDM.2012.PS-3-23

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[PS-3-23] Superior Recovery Characteristics of SiGe pMOSFETs under NBTI Stress

D. Y. Choi¹, C. W. Sohn¹, H. C. Sagong¹, E .Y. Jeong¹, J. W. Jang¹, C. K. Baek¹, C. Y. Kang², J. S. Lee¹, Y. H. Jeong¹ (1.Pohang Univ. of Sci. and Tech. (POSTECH) , Republic of Korea, 2.SEMATECH , USA)

https://doi.org/10.7567/SSDM.2012.PS-3-23

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